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Silicon zero bias Schottky diodes span DC to 4GHz

Designed for handset and RFID detector applications, this new series from M/A-COM offers single, series tee, series tee reverse, and unconnected pair device configurations.



Courtesy of eeProductCenter

Lowell, MA—M/A-COM announced the release of the MA4E2200 series of Zero Bias Detector (ZBD) silicon Schottky diodes for use in handset and RFID detector applications.

These silicon medium barrier devices are offered in the most popular JEDEC plastic packages: SOD-323, SOT-23, and SOT-143, for high volume, surface mount, solder re-flow manufacturing. They are offered as single, series tee, series tee reverse and unconnected pair device configurations.

These Schottky products are well suited for circuits requiring lower Tangential Sensitivity (TSS) values as in RF envelope detection with temperature compensation. In addition, they can be used in limiter circuits where lower flat leakage power is required (< + 10 dBm). The MA4E2200 series can operate from DC to 4 GHz and up to a peak RF incident power of + 20 dBm.

The MA4E2200 series ZBD Schottky products are manufactured using M/A-COM's Planar-BCB foundry process. This process produces excellent device uniformity and repeatability to maintain consistent RF Circuit Performance.

Pricing in 100,000 piece quantities is as follows: MA4E2200A-1141T (SOD-323)$0.17 ea.; MA4E2200B-287T or MA4E2200D-287T (SOT-23) $0.21 ea.; MA4E2200E-1068T (SOT-143)$0.23 ea. All models are available from stock.

M/A-COM, Inc. 1-800-366-2266, +44 (0) 1908-574-200 www.macom.com



 
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